US 12,224,350 B2
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices
Biswajeet Guha, Hillsboro, OR (US); William Hsu, Hillsboro, OR (US); Leonard P. Guler, Hillsboro, OR (US); Dax M. Crum, Beaverton, OR (US); and Tahir Ghani, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 29, 2023, as Appl. No. 18/374,959.
Application 18/374,959 is a continuation of application No. 17/549,827, filed on Dec. 13, 2021, granted, now 11,855,223.
Application 17/549,827 is a continuation of application No. 16/017,966, filed on Jun. 25, 2018, granted, now 11,233,152, issued on Jan. 25, 2022.
Prior Publication US 2024/0030348 A1, Jan. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/7856 (2013.01) [H01L 21/02603 (2013.01); H01L 21/823481 (2013.01); H01L 23/5226 (2013.01); H01L 29/0649 (2013.01); H01L 29/0669 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 2029/7858 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a first fin extending above a trench isolation structure;
a second fin extending above the trench isolation structure, the second fin laterally spaced apart from the first fin; and
a gate endcap isolation structure between the first fin and the second fin, the gate endcap isolation structure over and extending into the trench isolation structure, the gate endcap isolation structure laterally spaced apart and separated from the first fin, and the gate endcap isolation structure laterally spaced apart and separated from the second fin.