| CPC H01L 29/78391 (2014.09) [G11C 11/223 (2013.01); H01L 29/40111 (2019.08); H01L 29/6684 (2013.01)] | 13 Claims |
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1. A semiconductor device, comprising:
a channel region;
a source and a drain connected to the channel region;
a gate electrode isolated from contact with the channel region;
an anti-ferroelectric layer between the channel region and the gate electrode;
a conductive layer between the gate electrode and the anti-ferroelectric layer, the conductive layer in contact with the anti-ferroelectric layer; and
a barrier layer between the anti-ferroelectric layer and the channel region,
wherein the anti-ferroelectric layer comprises zirconium oxide at a ratio of over 50% in adjacent region to the conductive layer and the anti-ferroelectric layer has non-hysteresis behavior characteristics.
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