| CPC H01L 29/7827 (2013.01) [H01L 27/0886 (2013.01); H01L 29/47 (2013.01); H01L 29/4916 (2013.01); H01L 29/78684 (2013.01)] | 18 Claims |
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1. A semiconductor device having a first surface and a second surface opposite the first surface, the semiconductor device comprising:
a substrate;
an epitaxial layer formed over the substrate;
a plurality of active regions disposed over the substrate and formed in the epitaxial layer, the plurality of active regions having a first total area; and
a plurality of cells of an active device comprising a silicon carbide Metal-Oxide-Semiconductor Field Effect Transistor, the plurality of cells respectively disposed in the plurality of active regions;
a plurality of control pads disposed over the first surface and respectively electrically coupled to gate electrodes of the plurality of cells;
a plurality of source pads disposed over the first surface and respectively electrically coupled to source electrodes of the plurality of cells;
a drain contact disposed over the second surface and electrically coupled to drain electrodes of the plurality of cells;
one or more inactive regions disposed over the substrate and between respective pairs of the active regions, the one or more inactive regions having a second total area,
wherein the second total area is greater than or equal to 1.5 times the first total area,
wherein a first half of the plurality of control pads are disposed along a first side of the semiconductor device,
wherein a second half of the plurality of control pads are disposed along a second side of the semiconductor device, and
wherein the first side is on an opposite side of the semiconductor device of the second side.
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