US 12,224,342 B2
Gate contact structure for a trench power MOSFET with a split gate configuration
Yean Ching Yong, Singapore (SG); Maurizio Gabriele Castorina, Singapore (SG); Voon Cheng Ngwan, Singapore (SG); Ditto Adnan, Singapore (SG); Fadhillawati Tahir, Singapore (SG); and Churn Weng Yim, Singapore (SG)
Assigned to STMicroelectronics Pte Ltd, Singapore (SG)
Filed by STMicroelectronics Pte Ltd, Singapore (SG)
Filed on Mar. 14, 2022, as Appl. No. 17/694,276.
Claims priority of provisional application 63/171,163, filed on Apr. 6, 2021.
Prior Publication US 2022/0320332 A1, Oct. 6, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/764 (2006.01); H01L 21/765 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 21/764 (2013.01); H01L 21/765 (2013.01); H01L 29/0649 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An integrated circuit transistor device, comprising:
a semiconductor substrate providing a drain;
a first doped region buried in the semiconductor substrate providing a body;
a second doped region in the semiconductor substrate providing a source, wherein the second doped region is adjacent the first doped region;
a trench extending into the semiconductor substrate and passing through the first and second doped regions;
a polyoxide region within the trench;
a polygate region within the trench, said polygate region comprising: a first gate lobe on a first side of the polyoxide region and a second gate lobe on a second side of the polyoxide region opposite said first side;
an insulating layer extending over the first doped region and trench; and
a pair of gate contacts for said trench, said pair of gate contacts comprising:
a first gate contact extending through the insulating layer and into the first gate lobe, wherein the first gate contact has a first length extending parallel to a longitudinal direction of the trench that is greater than a first width perpendicular to the first length; and
a second gate contact extending through the insulating layer and into the second gate lobe, wherein the second gate contact has a second length extending parallel to the longitudinal direction of the trench that is greater than a second width perpendicular to the second length.