US 12,224,341 B2
Semiconductor device and method of manufacturing the same
NackYong Joo, Suwon-si (KR)
Assigned to HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed by Hyundai Motor Company, Seoul (KR); and Kia Corporation, Seoul (KR)
Filed on Aug. 12, 2021, as Appl. No. 17/400,345.
Claims priority of application No. 10-2020-0164307 (KR), filed on Nov. 30, 2020.
Prior Publication US 2022/0173241 A1, Jun. 2, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising: a conductive region, wherein the conductive region includes:
an n+ type substrate,
an n− type layer positioned at a first surface of the n+ type substrate,
a p type region positioned on the n− type layer, and
a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and
a side wall of the trench positioned at beside a portion where the conductive region ends is inclined;
an end region positioned at the portion where the conductive region ends; and
a connection region positioned between the conductive region and the end region,
wherein a region under the inclined side wall of the trench is filled with an insulating material, and the region under the inclined side wall of the trench is a region surrounded by the inclined side wall, a line extending horizontally at the intersection point of the inclined side wall and the bottom surface of the trench, and a line extending vertically at the intersection of the inclined side wall and a lower gate runner,
wherein a p type end structure is positioned in the n− type layer of the end region, and the p type end structure includes a plurality of regions injected with p type ions, and the regions injected with the p type ions are spaced apart from each other by a predetermined interval, and
the side wall of the trench is inclined from the intersection point of the side wall and the bottom surface of the trench to the intersection of the side wall and the lower gate runner.