US 12,224,339 B2
High electron mobility transistor
Yu-Ming Hsu, Changhua County (TW); Yu-Chi Wang, Taipei (TW); Yen-Hsing Chen, Taipei (TW); Tsung-Mu Yang, Tainan (TW); and Yu-Ren Wang, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 2, 2022, as Appl. No. 17/735,100.
Application 17/735,100 is a division of application No. 16/574,094, filed on Sep. 18, 2019, granted, now 11,355,626.
Claims priority of application No. 201910788603.5 (CN), filed on Aug. 26, 2019.
Prior Publication US 2022/0262942 A1, Aug. 18, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/267 (2006.01)
CPC H01L 29/7787 (2013.01) [H01L 29/155 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/04 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT), comprising:
an aluminum gallium nitride layer;
a gallium nitride layer disposed below the aluminum gallium nitride layer;
a magnesium oxide layer disposed under the gallium nitride layer;
a source electrode and a drain electrode disposed on the aluminum gallium nitride layer;
a gate electrode disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode; and
a substrate, a nucleation layer, a transition layer and a superlattice disposed below the magnesium oxide layer, wherein the substrate, the nucleation layer, the transition layer and the superlattice are disposed from bottom to top.