US 12,224,328 B2
Semiconductor device having word line structure
Cheng-Yan Ji, New Taipei (TW); and Wei-Tong Chen, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 21, 2022, as Appl. No. 17/699,331.
Prior Publication US 2023/0299161 A1, Sep. 21, 2023
Int. Cl. H01L 29/423 (2006.01); G11C 5/06 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H10B 12/00 (2023.01)
CPC H01L 29/4236 (2013.01) [G11C 5/063 (2013.01); H01L 29/401 (2013.01); H01L 29/4916 (2013.01); H01L 29/495 (2013.01); H10B 12/488 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate having an active region; and
a word line structure disposed in the active region of the semiconductor substrate, the word line structure comprising:
a first work function layer;
a second work function layer on the first work function layer;
a buffer structure having a bottom buffer layer between the first work function layer and the second work function layer; and
a barrier layer having a top portion between the bottom buffer layer of the buffer structure and the first work function layer;
wherein the word line structure further comprises:
a dielectric layer surrounding the buffer structure, the barrier layer, the first work function layer and the second work function layer, wherein the buffer structure and the dielectric layer comprise a same material.