US 12,224,327 B2
Semiconductor device and method
Kuo-Ju Chen, Taichung (TW); Shih-Hsiang Chiu, New Taipei (TW); Su-Hao Liu, Jhongpu Township (TW); Liang-Yin Chen, Hsinchu (TW); Huicheng Chang, Tainan (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/366,369.
Application 18/366,369 is a division of application No. 17/223,293, filed on Apr. 6, 2021, granted, now 11,862,694.
Claims priority of provisional application 63/082,045, filed on Sep. 23, 2020.
Prior Publication US 2023/0411474 A1, Dec. 21, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/28568 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first dielectric layer over a conductive feature, wherein a first portion of the first dielectric layer comprises a first dopant;
a metal feature electrically coupled to the conductive feature, the metal feature comprising:
a first contact material in contact with the conductive feature;
a second contact material over the first contact material, the second contact material comprising a material different from the first contact material, wherein a first portion of the second contact material further comprises the first dopant; and
a dielectric liner between the first dielectric layer and the metal feature, wherein a first portion of the dielectric liner comprises the first dopant.