US 12,224,325 B2
Semiconductor device and manufacturing method thereof
Li-Zhen Yu, New Taipei (TW); Chia-Hao Chang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 14, 2023, as Appl. No. 18/353,027.
Application 17/401,970 is a division of application No. 16/546,799, filed on Aug. 21, 2019, granted, now 11,094,788, issued on Aug. 17, 2021.
Application 18/353,027 is a continuation of application No. 17/401,970, filed on Aug. 13, 2021, granted, now 11,749,728.
Prior Publication US 2024/0021682 A1, Jan. 18, 2024
Int. Cl. H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 29/41725 (2013.01) [H01L 21/0228 (2013.01); H01L 21/28556 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a gate structure over the substrate;
source/drain regions in the substrate and on opposite sides of the gate structure;
a source/drain contact over one of the source/drain regions;
a metal cap over the source/drain contact, wherein a bottom surface of the metal cap is higher than a top surface of the gate structure;
a contact plug over the metal cap; and
a first etch stop layer over the gate structure, wherein the first etch stop layer is in contact with the metal cap and the contact plug.