US 12,224,321 B2
Scalable MPS device based on SiC
Simone Rascuná, Catania (IT); and Mario Giuseppe Saggio, Aci Bonaccorsi (IT)
Assigned to STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed on Dec. 7, 2023, as Appl. No. 18/532,975.
Application 18/532,975 is a continuation of application No. 17/374,871, filed on Jul. 13, 2021, granted, now 11,869,944.
Claims priority of application No. 102020000018127 (IT), filed on Jul. 27, 2020.
Prior Publication US 2024/0178280 A1, May 30, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 29/66136 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate of silicon carbide;
a drift layer of silicon carbide on the substrate;
a first implanted region in the drift layer, the first implanted region having a first dimension in a first direction;
a second implanted region in the drift layer, the second implanted region having a second dimension in the first direction, the second implanted region being spaced from the first implanted region by a third dimension in the first direction, the third dimension being less than both the first and the second dimension;
a first ohmic contact in the first implanted region;
a second ohmic contact in the second implanted region;
a first junction-barrier (JB) diode at a first surface of the drift layer and the first implanted region;
a second junction-barrier (JB) diode at the first surface of the drift layer and the second implanted region; and
a first electrical terminal in ohmic contact with the first surface of the drift layer at the first implanted region and the second implanted region
a first Schottky diode at the drift layer between the first and second implanted regions.