US 12,224,319 B2
Semiconductor device
Tatsuya Naito, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Sep. 20, 2023, as Appl. No. 18/471,282.
Application 18/471,282 is a continuation of application No. 17/744,717, filed on May 15, 2022, granted, now 11,810,952.
Application 17/744,717 is a continuation of application No. 16/951,661, filed on Nov. 18, 2020, granted, now 11,342,416, issued on May 24, 2022.
Application 16/951,661 is a continuation of application No. 16/207,193, filed on Dec. 3, 2018, granted, now 10,847,617, issued on Nov. 24, 2020.
Claims priority of application No. 2017-240022 (JP), filed on Dec. 14, 2017; and application No. 2018-173307 (JP), filed on Sep. 18, 2018.
Prior Publication US 2024/0014269 A1, Jan. 11, 2024
Int. Cl. H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/1083 (2013.01) [H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/4238 (2013.01); H01L 29/7397 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41708 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first-conductivity-type region provided in a semiconductor substrate;
a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate;
a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction;
a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion;
a second-conductivity-type contact region provided in the mesa portion above the drift region and having a higher doping concentration than the base region; and
a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction, wherein
the contact region extends in the extending direction over an end of the floating region in top view of the semiconductor substrate.