US 12,224,317 B2
Vertical power semiconductor device and manufacturing method
Hans-Joachim Schulze, Taufkirchen (DE); Christian Jaeger, Munich (DE); Moriz Jelinek, Villach (AT); Daniel Schloegl, Villach (AT); and Benedikt Stoib, Feldkirchen-Westerham (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jul. 12, 2023, as Appl. No. 18/220,989.
Application 18/220,989 is a division of application No. 17/217,251, filed on Mar. 30, 2021, granted, now 11,742,384.
Claims priority of application No. 102020110072.8 (DE), filed on Apr. 9, 2020.
Prior Publication US 2023/0352531 A1, Nov. 2, 2023
Int. Cl. H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/0834 (2013.01) [H01L 21/26513 (2013.01); H01L 21/3221 (2013.01); H01L 29/0638 (2013.01); H01L 29/1095 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of manufacturing a vertical power semiconductor device, the method comprising:
forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms; and
forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks,
forming a fourth impurity peak in the field stop region by at least one helium ion implantation process,
wherein a first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks,
wherein the first impurity peak includes hydrogen and the second impurity peak includes helium,
wherein the fourth impurity peak is set at a fourth vertical distance from the second main surface, and
wherein the first impurity peak is arranged between the second impurity peak and the fourth impurity peak along the vertical direction.