US 12,224,316 B2
Semiconductor device including insulated gate bipolar transistor
Christian Philipp Sandow, Haar (DE); and Wolfgang Roesner, Ottobrunn (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Aug. 5, 2022, as Appl. No. 17/881,926.
Application 17/881,926 is a continuation of application No. 17/106,413, filed on Nov. 30, 2020, granted, now 11,444,158.
Claims priority of application No. 102019133030.0 (DE), filed on Dec. 4, 2019.
Prior Publication US 2022/0376048 A1, Nov. 24, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/266 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/0834 (2013.01) [H01L 29/0847 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 21/266 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor body comprising a first surface and a second surface opposite the first surface;
an IGBT (insulated gate bipolar transistor) in an IGBT portion of the semiconductor body; and
a diode in a diode portion of the semiconductor body,
wherein the diode comprises:
an anode region of a first conductivity type and confined by diode trenches along a first lateral direction, each of the diode trenches including a diode trench electrode and a diode trench dielectric;
a cathode contact region of a second conductivity type adjoining the second surface of the semiconductor body opposite to the first surface; and
at least two first contact grooves extending into the anode region along a vertical direction from the first surface of the semiconductor body, the at least two first contact grooves being separated from one another along the first lateral direction.