| CPC H01L 29/0665 (2013.01) [H01L 29/6656 (2013.01)] | 20 Claims |
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1. A semiconductor device, comprising:
an active pattern extending in a first direction on a substrate;
a first gate structure on the active pattern, the first gate structure including:
a first gate electrode intersecting the active pattern, the first gate electrode extending in a second direction intersecting the first direction, and
a first gate capping pattern on the first gate electrode, the first gate capping pattern including:
a first lower gate capping liner defining a first gate capping recess, the first lower gate capping liner having a first horizontal portion extending along an upper surface of the first gate electrode, and a first vertical portion extending from the first horizontal portion in a third direction intersecting the first direction and the second direction, and
a first gate capping filling film on the first lower gate capping liner and filling the first gate capping recess;
a second gate structure extending in the second direction, the second gate structure being spaced apart from the first gate structure in the first direction;
a first epitaxial pattern on the active pattern, the first epitaxial pattern being between the first gate structure and the second gate structure;
a gate contact on and connected to the first gate electrode, wherein the first gate capping filing film is disposed in a space between the first lower gate capping liner and the gate contact; and
a first active contact on and connected to the first epitaxial pattern.
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