US 12,224,304 B2
Light emitting diode structure with individual fuctionable LED units and method for manufacturing the same
Wing Cheung Chong, Hong Kong (CN)
Assigned to RAYSOLVE OPTOELECTRONICS (SUZHOU) COMPANY LIMITED, Suzhou (CN)
Filed by RAYSOLVE OPTOELECTRONICS (SUZHOU) COMPANY LIMITED, Suzhou (CN)
Filed on Jan. 29, 2021, as Appl. No. 17/162,515.
Claims priority of provisional application 63/007,829, filed on Apr. 9, 2020.
Prior Publication US 2021/0320145 A1, Oct. 14, 2021
Int. Cl. H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) structure, comprising:
a substrate; and
a plurality of LED units formed on the substrate, each LED unit comprising:
a bonding layer formed on the substrate;
a first doping type semiconductor layer formed on the bonding layer;
a second doping type semiconductor layer formed on the first doping type semiconductor layer;
a passivation layer formed on the second doping type semiconductor layer and a portion of the first doping type semiconductor layer; and
an electrode layer formed on a portion of the passivation layer and contacting the second doping type semiconductor layer,
wherein the plurality of LED units comprise a first LED unit and a second LED unit adjacent to the first LED unit, wherein the first doping type semiconductor layer of the first LED unit horizontally extends to the first doping type semiconductor layer of the second LED unit adjacent to the first LED unit, the first LED unit and the second LED unit are individually functionable LED units, and an opening is formed in the first doping type semiconductor layer between the first LED unit and the second LED unit without disconnecting the first doping type semiconductor layer of the first LED unit from the first doping type semiconductor layer of the second LED unit,
wherein the substrate comprises a driving circuit to drive the plurality of LED units, the driving circuit comprises a contact exposed by the opening in the first doping type semiconductor layer between the first LED unit and the second LED unit, and the contact is electrically connected with the second doping type semiconductor layer of the first LED unit through the electrode layer, and
wherein the bonding layer is formed between the substrate and the first doping type semiconductor layer to bond the substrate and the plurality of LED units.