| CPC H01L 27/14689 (2013.01) [G01T 1/2018 (2013.01); H01L 27/14636 (2013.01); H01L 27/14663 (2013.01)] | 6 Claims |

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1. A manufacturing method of a photoelectric conversion panel comprising:
forming a transistor on a substrate;
forming a photodiode at an upper layer overlying the transistor;
forming a first insulating film configured to cover the photodiode;
forming a first flattening film configured to cover the first insulating film;
forming a first hole portion configured to expose a part of an upper face of the photodiode in the first flattening film and the first insulating film;
forming a second hole portion configured to expose a source electrode of the transistor or a connection electrode connected to the source electrode in the first flattening film and the first insulating film;
forming a second insulating film configured to cover the first flattening film, a part of the second insulating film being disposed in each of the first hole portion and the second hole portion;
forming a third hole portion in the second insulating film disposed in the first hole portion;
forming a fourth hole portion in the second insulating film disposed in the second hole portion;
forming a bias line at an upper layer overlying the second insulating film, a part of the bias line being disposed in the third hole portion; and
forming a data line at an upper layer overlying the second insulating film, a part of the data line being disposed in the fourth hole portion.
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