| CPC H01L 27/14636 (2013.01) [H01L 27/14612 (2013.01); H01L 27/1463 (2013.01)] | 9 Claims |

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1. A light detecting device, comprising:
a first pixel provided on a semiconductor substrate; and
a trench including a first region that isolates the first pixel from an adjacent pixel and a second region in which a first photoelectric conversion unit provided in the first pixel is shielded from a second photoelectric conversion unit provided in the first pixel,
wherein the first region encloses the first pixel,
wherein the second region has a first portion that protrudes from a first portion of the first region to extend between a first floating diffusion region and a second floating diffusion region provided in the first pixel in plan view,
wherein the second region has a second portion that protrudes from a second portion of the first region to extend between a first transistor and a second transistor provided in the first pixel in the plan view,
wherein the first portion of the first region is on a first side of the first pixel,
wherein the second portion of the first region is on a second side of the first pixel,
wherein the first side of the first pixel is opposite the second side of the first pixel, and
wherein the first portion of the second region and the second portion of the second region protrude toward a contact region between the first portion of the first region and the second portion of the first region and between the first portion of the second region and the second portion of the second region in the plan view.
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