US 12,224,297 B2
Method of forming an image sensor having stress releasing structure
Yun-Wei Cheng, Hsinchu (TW); Chun-Wei Chia, Hsinchu (TW); Chun-Hao Chou, Hsinchu (TW); Kuo-Cheng Lee, Hsinchu (TW); and Ying-Hao Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 19, 2023, as Appl. No. 18/156,693.
Application 18/156,693 is a division of application No. 17/410,666, filed on Aug. 24, 2021, granted, now 11,569,289.
Application 17/410,666 is a continuation of application No. 17/225,701, filed on Apr. 8, 2021, granted, now 11,569,288.
Application 17/225,701 is a continuation of application No. 16/591,891, filed on Oct. 3, 2019, granted, now 10,985,199, issued on Apr. 20, 2021.
Claims priority of provisional application 62/753,242, filed on Oct. 31, 2018.
Prior Publication US 2023/0163150 A1, May 25, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 23/00 (2006.01)
CPC H01L 27/14634 (2013.01) [H01L 23/562 (2013.01); H01L 27/14621 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making a semiconductor structure, the method comprising:
forming a pixel array region on a substrate;
forming a first seal ring region on the substrate, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region comprises a first seal ring;
forming a first isolation feature in the first seal ring region, wherein forming the first isolation feature comprises filling a first opening with a dielectric material, wherein the first isolation feature is a continuous structure surrounding the pixel array region; and
forming a second isolation feature between the first isolation feature and the pixel array region, wherein forming the second isolation feature comprises filling a second opening with the dielectric material.