US 12,224,296 B2
Image sensor including a pixel separation structure
Hongki Kim, Hwaseong-si (KR); Changrok Moon, Seoul (KR); Taehyong Kim, Suwon-si (KR); Seungjae Oh, Suwon-si (KR); and Jihyun Kwak, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 27, 2021, as Appl. No. 17/511,754.
Claims priority of application No. 10-2020-0160383 (KR), filed on Nov. 25, 2020.
Prior Publication US 2022/0165774 A1, May 26, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14625 (2013.01) [H01L 27/14685 (2013.01); H01L 27/1463 (2013.01); H01L 27/14649 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate that has a first surface and a second surface opposite to each other, wherein the semiconductor substrate includes:
a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and
a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region;
a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and
a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.