| CPC H01L 27/14614 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01)] | 12 Claims |
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1. A method of manufacturing an image sensor, the method comprising:
forming a first dopant region having a second conductivity type in a semiconductor substrate,
wherein the semiconductor substrate comprises a first surface and a second surface opposite to the first surface, and the semiconductor substrate has a first conductivity type different from the second conductivity type;
forming a pixel isolation structure defining a plurality of pixel regions in the semiconductor substrate;
forming a vertical trench by patterning the first surface of the semiconductor substrate in each of the pixel regions;
forming a mask pattern exposing each of the pixel regions on the first surface of the semiconductor substrate, wherein the mask pattern comprises a residual mask pattern filling at least a portion of the vertical trench;
forming a second dopant region by ion-implanting dopants having the second conductivity type into the semiconductor substrate by using the mask pattern as an ion-implantation mask, wherein the second dopant region is adjacent to the vertical trench; and
forming a transfer gate electrode in the vertical trench, wherein a gate insulating layer is interposed between the transfer gate electrode and an inner surface of the vertical trench.
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