| CPC H01L 27/1255 (2013.01) [H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H10B 12/30 (2023.02)] | 18 Claims |
|
1. A semiconductor device comprising:
a first insulator;
a first conductor in an opening in the first insulator;
a transistor electrically connected to the first conductor, the transistor comprising:
a first oxide semiconductor over the first insulator;
a second oxide semiconductor over the first oxide semiconductor;
a third oxide semiconductor over the second oxide semiconductor;
a source electrode in contact with a first side surface of the first oxide semiconductor and a first side surface of the second oxide semiconductor;
a drain electrode in contact with a second side surface of the first oxide semiconductor and a second side surface of the second oxide semiconductor; and
a gate electrode over the third oxide semiconductor;
a second insulator over the source electrode and the drain electrode;
a second conductor in a first opening in the second insulator; and
a third insulator in the first opening in the second insulator,
wherein the third insulator is in contact with a side surface of the second conductor,
wherein the first conductor and one of the source electrode and the drain electrode overlap each other,
wherein the third oxide semiconductor and the gate electrode are provided in a second opening in the second insulator, and
wherein the second conductor and the first conductor overlap each other.
|