US 12,224,286 B2
Symmetric dual-sided MOS IC
Ravi Pramod Kumar Vedula, San Diego, CA (US); and Vikram Sekar, San Diego, CA (US)
Assigned to QUALCOMM INCORPORATED, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Sep. 22, 2021, as Appl. No. 17/481,618.
Prior Publication US 2023/0092546 A1, Mar. 23, 2023
Int. Cl. H01L 27/12 (2006.01); H01L 23/535 (2006.01)
CPC H01L 27/1203 (2013.01) [H01L 23/535 (2013.01); H01L 27/1211 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A dual-sided metal oxide semiconductor (MOS) integrated circuit (IC), comprising:
an isolation layer extending in a first direction and a second direction and separating the MOS IC into a MOS IC frontside and a MOS IC backside, the MOS IC having a first subsection and a second subsection adjacent to each other in the first direction, the first subsection and the second subsection being separated at an imaginary plane extending in the second direction and a third direction through the MOS IC, where the first direction, the second direction, and the third direction are each orthogonal to each other; and
a MOS transistor on the MOS IC, the MOS transistor comprising:
a plurality of MOS gates extending in the second direction;
a first source connection extending parallel to the MOS gates and to the isolation layer in the first subsection of the MOS IC frontside;
a second source connection extending parallel to the MOS gates and to the isolation layer in the second subsection of the MOS IC backside, the first and second source connections being electrically coupled together through a first front-to-backside connection extending in the third direction through the isolation layer;
a first drain connection extending parallel to the MOS gates and to the isolation layer in the first subsection of the MOS IC backside; and
a second drain connection extending parallel to the MOS gates and to the isolation layer in the second subsection of the MOS IC frontside, the first and second drain connections being electrically coupled together through a second front-to-backside connection extending in the third direction through the isolation layer.