US 12,224,282 B2
Integrated circuit device including metal-oxide semiconductor transistors
Jinhyeok Song, Incheon (KR); and Mingeun Song, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 17, 2023, as Appl. No. 18/198,496.
Application 18/198,496 is a continuation of application No. 17/199,720, filed on Mar. 12, 2021, granted, now 11,699,700.
Claims priority of application No. 10-2020-0114870 (KR), filed on Sep. 8, 2020.
Prior Publication US 2023/0290777 A1, Sep. 14, 2023
Int. Cl. H01L 27/088 (2006.01); H01L 23/544 (2006.01); H01L 23/66 (2006.01)
CPC H01L 27/088 (2013.01) [H01L 23/544 (2013.01); H01L 23/66 (2013.01)] 27 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
an active region extending in a first direction;
a plurality of fin active patterns extending in parallel on the active region in the first direction;
a plurality of gate patterns spaced apart from each other in the first direction, the plurality of gate patterns extending across the active region and the fin active pattern in a second direction perpendicular to the first direction;
a plurality of isolated gate contact regions, each isolated gate contact region of the plurality of isolated gate contact regions being spaced apart from opposite sides of the active region in the second direction and electrically connected to a first subset of the plurality of gate patterns; and
a plurality of gate cutting regions at sides of the isolated gate contact regions in the first direction,
wherein the plurality of gate cutting regions extend through a second subset of the plurality of gate patterns to thereby cut the second subset of the plurality of gate patterns into discontinuous sections within the active region.