US 12,224,279 B2
Integrated mult-device chip and package
Tsung-Wen Mou, Wuxi (CN); Lei Shi, Wuxi (CN); and Jifeng Zhou, Wuxi (CN)
Assigned to Littelfuse Semiconductor (Wuxi) Co., Ltd., Wuxi (CN)
Appl. No. 17/615,927
Filed by Littelfuse Semiconductor (Wuxi) Co., Ltd., Wuxi (CN)
PCT Filed Jun. 3, 2019, PCT No. PCT/CN2019/089797
§ 371(c)(1), (2) Date Dec. 2, 2021,
PCT Pub. No. WO2020/243875, PCT Pub. Date Dec. 10, 2020.
Prior Publication US 2022/0320072 A1, Oct. 6, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01)
CPC H01L 27/0259 (2013.01) [H01L 23/49541 (2013.01); H01L 27/0255 (2013.01); H01L 23/3121 (2013.01); H01L 27/0292 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A protection device, comprising:
a semiconductor substrate;
a thyristor-type device, formed within the semiconductor substrate, the thyristor-type device extending from a first main surface of the semiconductor substrate to a second main surface of the semiconductor substrate;
a first PN diode, formed within the semiconductor substrate;
a second PN diode, formed within the semiconductor substrate, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode; and
an electrical isolation barrier, extending from the first main surface to the second main surface, and disposed between the second PN diode and the thyristor-type device.