US 12,224,278 B2
Active zones with offset in semiconductor cell
Guo-Huei Wu, Hsinchu (TW); Chih-Liang Chen, Hsinchu (TW); and Li-Chun Tien, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 29, 2023, as Appl. No. 18/523,023.
Application 18/523,023 is a continuation of application No. 17/213,980, filed on Mar. 26, 2021, granted, now 11,855,068.
Prior Publication US 2024/0096866 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/528 (2006.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0207 (2013.01) [G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 23/5286 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
first-type transistors having channel regions, source regions, and drain regions aligned within a first-type active zone which has a first alignment boundary extending in a first direction;
second-type transistors having channel regions, source regions, and drain regions aligned within a second-type active zone which has a first alignment boundary extending in the first direction and adjacent to the first alignment boundary of the first-type active zone;
a first power rail extending in the first direction which is adjacent to the first-type active zone and has a long edge separated from the first alignment boundary of the first-type active zone by a first distance along a second direction perpendicular to the first direction;
a second power rail extending in the first direction which is adjacent to the second-type active zone and has a long edge separated from the first alignment boundary of the second-type active zone by a second distance along the second direction; and
wherein the first distance is different from the second distance by a predetermined distance which is at least 10% of a third distance along the second direction between the long edge of the first power rail and the long edge of the second power rail.