US 12,224,274 B2
Micro light-emitting diode display panel and manufacturing method therefor
Yuju Chen, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/763,645
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Mar. 17, 2021, PCT No. PCT/CN2021/081368
§ 371(c)(1), (2) Date Mar. 24, 2022,
PCT Pub. No. WO2021/185289, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 202010202937.2 (CN), filed on Mar. 20, 2020.
Prior Publication US 2022/0344315 A1, Oct. 27, 2022
Int. Cl. H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01)
CPC H01L 25/167 (2013.01) [H01L 24/95 (2013.01); H01L 33/0093 (2020.05); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08502 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0066 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A manufacturing method for a micro light-emitting diode display panel, the manufacturing method comprising:
providing a base substrate carrying a plurality of light-emitting diode dies, each light-emitting diode die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer that are formed on the base substrate and sequentially arranged in a direction away from the base substrate, wherein the first semiconductor layer is bonded with the base substrate through a sacrificial layer, a material of the sacrificial layer is decomposable under laser irradiation;
providing a backplane having a plurality of bonding structures;
bonding at least some light-emitting diode dies of the plurality of light-emitting diode dies to at least some of the plurality of bonding structures through respective first conductive layers; and
peeling each of the at least some light-emitting diode dies from the base substrate through laser lift-off; wherein
peeling each of the at least some light-emitting diode dies from the base substrate through the laser lift-off includes: performing laser ablation on the sacrificial layer corresponding to each of the at least some light-emitting diode dies to separate the at least some light-emitting diode dies from the base substrate;
performing the laser ablation on the sacrificial layer corresponding to each of the at least some light-emitting diode dies to separate the at least some light-emitting diode dies from the base substrate includes: covering remaining light-emitting diode dies of the plurality of light-emitting diode dies other than the at least some light-emitting diode dies; and irradiating each of the at least some light-emitting diode dies from a side, away from the plurality of light-emitting diode dies, of the base substrate by using laser with a preset irradiation frequency in a preset ambient atmosphere to decompose the sacrificial layer under irradiation of the laser, so that the at least some light-emitting diode dies are separated from the base substrate; and
the manufacturing method further includes:
forming an electrode pattern on a side, away from the backplane, of a first semiconductor layer of each of the at least some light-emitting diode dies, the electrode pattern being formed in an edge region of a light-emitting surface of the light-emitting diode die; and
etching a surface, away from a light-emitting material layer, of the first semiconductor layer of the light-emitting diode die by using the electrode pattern as a mask to form at least one depression in a middle region of the surface of the first semiconductor layer of the light-emitting diode die.