US 12,224,269 B2
Optoelectronic device in which the pixels contain light-emitting diodes that emit several colors and manufacturing method
Walf Chikhaoui, Voiron (FR); Vishnuvarthan Kumaresan, Voiron (FR); and Philippe Gilet, Teche (FR)
Assigned to ALEDIA, Echirolles (FR)
Appl. No. 17/627,464
Filed by ALEDIA, Échirolles (FR)
PCT Filed Jun. 26, 2020, PCT No. PCT/FR2020/051119
§ 371(c)(1), (2) Date Jan. 14, 2022,
PCT Pub. No. WO2021/009426, PCT Pub. Date Jan. 21, 2021.
Claims priority of application No. 19/07920 (FR), filed on Jul. 15, 2019.
Prior Publication US 2022/0278081 A1, Sep. 1, 2022
Int. Cl. H01L 25/075 (2006.01); H01L 33/18 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 33/18 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An optoelectronic device comprising a plurality of pixels each including at least one primary sub-pixel comprising at least one primary light-emitting diode adapted to emit a first light radiation having substantially a first wavelength and formed on a support face of a substrate, each primary light-emitting diode comprising:
at least a first primary semiconductor portion electrically connected to a first electrode and doped according to a first doping type selected among a N-type doping and P-type doping, the first primary semiconductor portion having a general wired shape elongated along a longitudinal axis extending in a first direction generally perpendicular to the support face of the substrate, the first primary semiconductor portion including a top end opposite to a proximal end of the first primary semiconductor portion facing towards the support face of the substrate,
at least one primary lattice parameter accommodation layer arranged at least on, and in contact with, the top end of the first primary semiconductor portion,
a second primary active semiconductor portion formed by epitaxial growth from the primary lattice parameter accommodation layer, the second primary active semiconductor portion being arranged at least on, and in contact with, the primary lattice parameter accommodation layer,
a third primary semiconductor portion electrically connected to a second electrode and doped according to a second doping type opposite to the first doping type and arranged at least on, and in contact with, the second primary active semiconductor portion,
wherein the second primary active semiconductor portion is configured so as to emit said first light radiation when at least one of the first and second electrodes is powered,
and wherein the primary lattice parameter accommodation layer has, at least at its interface with the second primary active semiconductor portion, a first difference in primary lattice parameters comprised between 2.12% and 0.93% relative to the second primary active semiconductor portion.