US 12,224,268 B2
Fan-out packages providing enhanced mechanical strength and methods for forming the same
Jen-Yuan Chang, Hsinchu (TW); and Chia-Ping Lai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,734.
Application 18/360,734 is a division of application No. 17/474,358, filed on Sep. 14, 2021, granted, now 11,862,610.
Claims priority of provisional application 63/162,982, filed on Mar. 18, 2021.
Prior Publication US 2023/0369294 A1, Nov. 16, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/81 (2013.01); H01L 24/96 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/211 (2013.01); H01L 2924/1437 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A fan-out package comprising:
a primary semiconductor die that comprises a primary single crystalline semiconductor substrate having a <100> crystallographic direction along a first crystallographic lattice direction and is laterally surrounded by a primary-level molding compound layer, wherein the primary semiconductor die comprises a first pair of primary-die sidewalls that are parallel to a first horizontal direction and a second pair of primary-die sidewalls that are parallel to a second horizontal direction and perpendicular to the first horizontal direction; and
a first complementary die that comprises a complementary single crystalline semiconductor substrate having a <100> crystallographic direction along a second crystallographic lattice direction and overlies or underlies, and is bonded to, the primary semiconductor die, is laterally surrounded by a complementary-level molding compound layer, and comprises a first pair of complementary-die sidewalls laterally extending along a third horizontal direction and comprises a second pair of complementary-die sidewalls laterally extending along a fourth horizontal direction that is perpendicular to the first pair of complementary-die sidewalls,
wherein the fan-out package comprises at least one feature selected from:
a first feature that the third horizontal direction is not parallel to the first horizontal direction or the second horizontal direction;
a second feature that the first crystallographic lattice direction is azimuthally offset from the first horizontal direction and from the second horizontal direction by at least 0.5 degree; and
a third feature that the second crystallographic lattice direction is azimuthally offset from the third horizontal direction and from the fourth horizontal direction by at least 0.5 degree.
 
11. A fan-out package comprising:
a primary semiconductor die that comprises a primary single crystalline semiconductor substrate having a first <100> crystallographic direction along a first crystallographic lattice direction and is laterally surrounded by a primary-level molding compound layer, wherein the primary semiconductor die comprises a first pair of primary-die sidewalls that are parallel to a first horizontal direction and a second pair of primary-die sidewalls that are parallel to a second horizontal direction and perpendicular to the first horizontal direction; and
a first complementary die that comprises a complementary single crystalline semiconductor substrate having a second <100> crystallographic direction along a second crystallographic lattice direction and overlies or underlies, and is bonded to, the primary semiconductor die, is laterally surrounded by a complementary-level molding compound layer, and comprises a first pair of complementary-die sidewalls laterally extending along a third horizontal direction and comprises a second pair of complementary-die sidewalls laterally extending along a fourth horizontal direction that is perpendicular to the first pair of complementary-die sidewalls,
wherein the fan-out package comprises at least one feature selected from:
a first feature that the third horizontal direction is not parallel to the first horizontal direction or the second horizontal direction;
a second feature that the first <100> crystallographic direction is aligned along a primary <100> crystallographic lattice direction that is azimuthally offset from the first horizontal direction and from the second horizontal direction by at least 0.5 degree; and
a third feature that the second <100> crystallographic direction is aligned along a complementary <100> crystallographic lattice direction that is azimuthally offset from the first horizontal direction and from the second horizontal direction by at least 0.5 degree.
 
16. A fan-out package comprising:
a primary semiconductor die that comprises a primary single crystalline semiconductor substrate having a first <100> crystallographic direction along a first crystallographic lattice direction, and comprising a first pair of primary-die sidewalls that are parallel to a first horizontal direction and a second pair of primary-die sidewalls that are parallel to a second horizontal direction and perpendicular to the first horizontal direction; and
a first complementary die that comprises a complementary single crystalline semiconductor substrate having a second <100> crystallographic direction along a second crystallographic lattice direction and overlies or underlies, and is bonded to, the primary semiconductor die, and comprising a first pair of complementary-die sidewalls laterally extending along a third horizontal direction and comprises a second pair of complementary-die sidewalls laterally extending along a fourth horizontal direction that is perpendicular to the first pair of complementary-die sidewalls,
wherein the fan-out package comprises at least one feature selected from:
a first feature that the third horizontal direction is not parallel to the first horizontal direction or the second horizontal direction;
a second feature that the first <100> crystallographic direction is aligned along a primary <100> crystallographic lattice direction that is azimuthally offset from the first horizontal direction and from the second horizontal direction by at least 0.5 degree; and
a third feature that the second <100> crystallographic direction is aligned along a complementary <100> crystallographic lattice direction that is azimuthally offset from the first horizontal direction and from the second horizontal direction by at least 0.5 degree.