US 12,224,262 B2
Substrate bonding apparatus and method of manufacturing semiconductor device by using the same
Taeyeong Kim, Suwon-si (KR); Ilyoung Han, Suwon-si (KR); and Hoechul Kim, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 18, 2024, as Appl. No. 18/638,947.
Application 18/638,947 is a continuation of application No. 16/933,055, filed on Jul. 20, 2020, granted, now 11,990,444.
Claims priority of application No. 10-2019-0101873 (KR), filed on Aug. 20, 2019.
Prior Publication US 2024/0266317 A1, Aug. 8, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/74 (2013.01) [H01L 24/16 (2013.01); H01L 24/80 (2013.01); H01L 23/00 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80091 (2013.01); H01L 2224/80095 (2013.01); H01L 2224/8012 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80908 (2013.01)] 10 Claims
OG exemplary drawing
 
9. A method of manufacturing a semiconductor device, the method comprising:
providing a first substrate disposed on a first bonding chuck and a second substrate disposed on a second bonding chuck, wherein the first substrate and the second substrate are located between the first bonding chuck and the second bonding chuck;
providing a seal in direct contact with the first bonding chuck and the second bonding chuck to enclose a bonding space between the first bonding chuck and the second bonding chuck;
supplying a process gas to the bonding space, the process gas having less reactivity with the first substrate and the second substrate compared with ambient gas outside the bonding space; and
bonding the first substrate to the second substrate.