| CPC H01L 24/32 (2013.01) [H01L 21/4853 (2013.01); H01L 23/49811 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2224/08167 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/29386 (2013.01); H01L 2224/32237 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/81896 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/9211 (2013.01)] | 15 Claims |

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1. A microelectronic structure comprising:
a substrate layer comprising:
a composite dielectric layer comprising an organic dielectric material and an inorganic filler material; and
one or more conductive substrate interconnect structures within the composite organic dielectric layer; and
a die comprising a die layer, the die layer comprising:
a die dielectric layer; and
one or more conductive die interconnect structures within the die dielectric layer, wherein the die layer is in direct contact with the substrate layer, and wherein at least one of the one or more conductive substrate interconnect structures is in direct contact with at least one of the one or more conductive die interconnect structures.
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