US 12,224,240 B2
Microelectronic devices including active contacts and support contacts, and related electronic systems and methods
S M Istiaque Hossain, Boise, ID (US); Indra V. Chary, Boise, ID (US); Anilkumar Chandolu, Boise, ID (US); Sidhartha Gupta, Boise, ID (US); and Shuangqiang Luo, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 9, 2021, as Appl. No. 17/396,939.
Prior Publication US 2023/0045353 A1, Feb. 9, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10B 41/20 (2023.01); H10B 41/35 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01)
CPC H01L 23/5283 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H10B 41/20 (2023.02); H10B 41/35 (2023.02); H10B 43/20 (2023.02); H10B 43/35 (2023.02)] 25 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising alternating conductive structures and dielectric structures;
memory pillars extending through the stack structure; and
contacts laterally adjacent to the memory pillars and extending through the stack structure, the contacts comprising active contacts and support contacts, the active contacts comprising a liner and a conductive material and the support contacts comprising the liner and a dielectric material, the conductive material of the active contacts being in electrical communication with the memory pillars.