US 12,224,238 B2
MIM eFuse memory devices and memory array
Meng-Sheng Chang, Chu-bei (TW); and Chia-En Huang, Xinfeng Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu (TW)
Filed on Sep. 14, 2021, as Appl. No. 17/474,257.
Claims priority of provisional application 63/188,161, filed on May 13, 2021.
Prior Publication US 2022/0367490 A1, Nov. 17, 2022
Int. Cl. H01L 23/525 (2006.01); H10B 20/25 (2023.01)
CPC H01L 23/5256 (2013.01) [H10B 20/25 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a transistor; and
a resistor electrically connected to the transistor, the transistor and the resistor forming a first one-time programmable (OTP) memory cell,
wherein the resistor includes a metal-based layer with a resistivity configured to irreversibly transition from a first resistance state to a second resistance state, and
wherein the metal-based layer has a first surface and a second surface, the first surface in direct contact with a via structure that is disposed between adjacent ones of a plurality of metallization layers, the second surface in direct contact with an interconnect structure that is disposed in one of the plurality of metallization layers, the first surface and the second surface being opposite to each other.