| CPC H01L 23/49838 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02282 (2013.01); H01L 21/288 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32051 (2013.01); H01L 21/32135 (2013.01); H01L 21/56 (2013.01)] | 12 Claims |

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1. A manufacturing method of a metal grid, comprising:
providing a base substrate;
forming a pattern comprising a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape;
forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and
forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid,
wherein the forming a metal material in the second groove comprises:
forming a metal film layer on the base substrate as a seed layer before the forming a pattern comprising a first dielectric layer on the base substrate through a patterning process;
forming a protective layer on a side of the seed layer away from the base substrate;
after the forming a second dielectric layer on a side of the first dielectric layer away from the base substrate, removing a bottom wall of the second groove and a part of the protective layer at a position of the bottom wall of the second groove; and
performing an electroplating process on the seed layer to form the metal material in the second groove.
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