US 12,224,229 B2
Semiconductor device with grooved die pad
Kyo Tanabiki, Himeji Hyogo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 24, 2021, as Appl. No. 17/410,508.
Claims priority of application No. 2021-042330 (JP), filed on Mar. 16, 2021.
Prior Publication US 2022/0301983 A1, Sep. 22, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49503 (2013.01) [H01L 21/4842 (2013.01); H01L 23/3121 (2013.01); H01L 23/3142 (2013.01); H01L 23/49579 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a frame including a die pad and terminals extending away from the die pad in a first direction;
a groove in an upper surface of the die pad, the groove extending lengthwise in the first direction and including a first groove portion and a second groove portion adjacent to each other in the first direction, the first groove portion being continuous with the second groove portion in the first direction;
a semiconductor element on the upper surface of the die pad but not overlapping the groove; and
a resin material in the groove and covering the semiconductor element, wherein the groove has a bottom surface and a first irregularity is formed in the bottom surface,
the second groove portion has a width in a second direction perpendicular to the first direction that is greater than a width of the first groove portion,
the length of the first groove portion in the first direction is greater than the length of the second groove portion in the first direction;
the groove is proximate to an outer edge of the die pad, the outer edge extending in the first direction, and
the groove extends the entire length of the die pad in the first direction.