US 12,224,227 B2
Method for manufacturing semiconductor structure with power connecting structures under transistors and semiconductor structure with power connecting structures under transistors
Tzu-Wei Chiu, Zhubei (TW); and Wei-Chih Chen, Zhubei (TW)
Assigned to Tzu-Wei Chiu, Zhubei (TW)
Filed by Tzu-Wei Chiu, Zhubei (TW)
Filed on May 18, 2022, as Appl. No. 17/746,997.
Claims priority of application No. 110118108 (TW), filed on May 19, 2021; and application No. 111110115 (TW), filed on Mar. 18, 2022.
Prior Publication US 2022/0375825 A1, Nov. 24, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 21/463 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/463 (2013.01); H01L 21/76873 (2013.01); H01L 21/823475 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A semiconductor structure with power connecting structures under transistors, comprising:
a substrate having an active surface and a bottom surface, the bottom surface being formed with at least one open slot, the at least one open slot passing through the active surface, and the at least one open slot comprising two opposite side walls and an open end;
an active layer arranged on the active surface and connected with the open end, the active layer comprising at least one transistor element and an interconnection layer, the interconnection layer covering the at least one transistor element, the at least one transistor element comprising at least one contact portion, and the at least one contact portion being exposed via the open end;
a plurality of stop portions respectively buried in the substrate, connected with the two side walls of the at least one open slot and in proximity to the open end;
a protecting layer conformally arranged on the two side walls and the bottom surface;
at least one conductive layer arranged on the at least one contact portion exposed via the open end;
an electroplating seed layer conformally covering the part of protecting layer and the at least one conductive layer located on the two side walls; and
at least one power connecting structure filling the at least one open slot.