US 12,224,225 B2
Semiconductor circuit structure with direct die heat removal structure
Chao-Chun Lu, Hsinchu (TW)
Assigned to INVENTION AND COLLABORATION LABORATORY, INC., Taipei (TW)
Filed by INVENTION AND COLLABORATION LABORATORY, INC., Taipei (TW)
Filed on May 24, 2024, as Appl. No. 18/674,649.
Claims priority of provisional application 63/572,960, filed on Apr. 2, 2024.
Claims priority of provisional application 63/555,918, filed on Feb. 21, 2024.
Claims priority of provisional application 63/543,724, filed on Oct. 11, 2023.
Claims priority of provisional application 63/523,645, filed on Jun. 28, 2023.
Prior Publication US 2025/0006586 A1, Jan. 2, 2025
Int. Cl. H01L 23/373 (2006.01); H01L 21/762 (2006.01); H01L 23/498 (2006.01); H01L 21/8234 (2006.01); H01L 25/065 (2023.01); H01L 27/088 (2006.01)
CPC H01L 23/3736 (2013.01) [H01L 21/76224 (2013.01); H01L 23/49827 (2013.01); H01L 21/823475 (2013.01); H01L 25/0657 (2013.01); H01L 27/0886 (2013.01); H01L 2225/06589 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor circuit structure comprising:
a semiconductor substrate with an original semiconductor surface;
a set of active regions within the semiconductor substrate;
a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction to a spare STI region, wherein the spare STI region is remote from the set of active regions; the spare STI region is connected to the first STI region, and the heat removing layer extends along the first direction to the spare STI region;
wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2; and
a heat removing pad within the spare STI region, wherein the heat removing layer is connected to the heat removing pad.