US 12,224,224 B2
Package structure with metallic layer over the surfaces of a plurality of semiconductor dies
Chih-Hao Chen, Taipei (TW); Po-Yuan Cheng, New Taipei (TW); Pu Wang, Hsinchu (TW); and Li-Hui Cheng, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 14, 2022, as Appl. No. 17/693,444.
Prior Publication US 2023/0290704 A1, Sep. 14, 2023
Int. Cl. H01L 23/373 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/3736 (2013.01) [H01L 21/4857 (2013.01); H01L 21/4871 (2013.01); H01L 21/563 (2013.01); H01L 23/3107 (2013.01); H01L 23/49822 (2013.01); H01L 23/5381 (2013.01); H01L 24/32 (2013.01); H01L 25/0657 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a first package component comprising:
semiconductor dies, each of the semiconductor dies comprising a first surface and a second surface opposite to each other;
a first insulating encapsulation laterally encapsulating the semiconductor dies; and
a redistribution structure underlying the first surfaces of the semiconductor dies and a first surface the first insulating encapsulation, and the redistribution structure being electrically coupled to the semiconductor dies; and
a second package component underlying the first package component and electrically coupled to the semiconductor dies through the redistribution structure;
a first underfill layer disposed between the first and second package components and extending to cover a sidewall of the first package component; and
a metallic layer overlying the second surfaces of the semiconductor dies and a second surface of the first insulating encapsulation, wherein the first surface and the second surface of the first insulating encapsulation are opposite to each other, and a peripheral region of the second surface of the first insulating encapsulation is accessibly exposed by the metallic layer, wherein in a top view, the metallic layer comprises a rounded corner that corresponds to a corner at the intersection between two adjacent sides of the first insulating encapsulation, and a width of the peripheral region between sides of the metallic layer and the first insulating encapsulation is less than a width of the peripheral region between the corner of the first insulating encapsulation and the rounded corner of the metallic layer.