US 12,224,220 B2
Semiconductor module and power conversion apparatus
Ken Sakamoto, Tokyo (JP); Haruko Hitomi, Tokyo (JP); Kozo Harada, Tokyo (JP); and Seiki Hiramatsu, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/781,713
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Feb. 6, 2020, PCT No. PCT/JP2020/004613
§ 371(c)(1), (2) Date Jun. 2, 2022,
PCT Pub. No. WO2021/157024, PCT Pub. Date Aug. 12, 2021.
Prior Publication US 2023/0024580 A1, Jan. 26, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01); H02M 7/5387 (2007.01); H01L 23/29 (2006.01); H02M 1/08 (2006.01)
CPC H01L 23/3135 (2013.01) [H01L 23/3142 (2013.01); H01L 24/05 (2013.01); H01L 24/42 (2013.01); H01L 24/44 (2013.01); H01L 24/45 (2013.01); H01L 24/47 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H02M 7/5387 (2013.01); H01L 23/293 (2013.01); H01L 23/296 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/4501 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45157 (2013.01); H01L 2224/4516 (2013.01); H01L 2224/45599 (2013.01); H01L 2224/4569 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48175 (2013.01); H01L 2924/1811 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01); H01L 2924/35121 (2013.01); H02M 1/08 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor module comprising:
a first power semiconductor device including a first electrode;
a conductive wire joined to a first surface of the first electrode; and
a resin film formed to be continuous on a first end portion of a first joint between the first electrode and the conductive wire in a longitudinal direction of the conductive wire, the first surface of the first electrode, and a second surface of the conductive wire,
wherein the resin film has an elastic elongation rate of 4.5% to 10.0%.