| CPC H01L 21/823481 (2013.01) [H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H03M 1/068 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01)] | 20 Claims |
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1. A method, comprising:
forming a plurality of fin structures over a substrate, the plurality of fin structures extending lengthwise along a first direction over a first area and a second area of the substrate, the first direction being extending along a top surface of the substrate;
forming a first fin cut trench through more than one of the plurality of the fin structures in the first area;
forming a second fin cut trench through more than one of the plurality of fin structures in the second area;
depositing a dielectric material in the first fin cut trench and the second fin cut trench to form a first isolation feature and a second isolation feature, respectively; and
forming a first isolation gate structure directly over a top surface of the first isolation feature and a second isolation gate structure directly over a top surface of the second isolation feature,
wherein the first fin cut trench includes a first width along the first direction and the second fin cut trench includes a second width along the first direction,
wherein the forming of the first isolation gate structure and the second isolation gate structure comprises:
forming a first dummy gate stack over the first isolation feature;
forming a second dummy gate stack over the second isolation feature;
replacing the first dummy gate stack with a first isolation gate structure; and
replacing the second dummy gate stack with a second isolation gate structure wherein a ratio of the second width to the first width is between 3 and 30.
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9. A method, comprising:
receiving a workpiece comprising a plurality of fin structures extending continuously along a first direction over a first area and a second area;
forming a first patterned photoresist layer over the workpiece;
etching the workpiece using the first patterned photoresist layer as an etch mask to form a first fin cut trench in the first area, the first fin cut trench extending lengthwise along a second direction perpendicular to the first direction and comprising a first trench width along the first direction;
forming a second patterned photoresist layer over the workpiece, including over the first fin cut trench;
etching the workpiece using the second patterned photoresist layer as an etch mask to form a second fin cut trench in the second area, the second fin cut trench extending lengthwise along the second direction and comprising a second trench width along the first direction;
forming a first isolation feature in the first fin cut trench and a second isolation feature in the second fin cut trench;
forming a first dummy gate stack directly over the first isolation feature and a second dummy gate stack over a first channel region of the plurality of fin structures in the first area;
forming a third dummy gate stack directly over the second isolation feature and a fourth dummy gate stack over a second channel region of the plurality of fin structures in the second area; and
replacing the first dummy gate stack, the second dummy gate stack, the third dummy gate stack, and the fourth dummy gate stack with a first gate structure, a first isolation gate structure, a second gate structure, and a second isolation gate structure, respectively,
wherein, along the first direction, the first dummy gate stack comprises a first width, the second dummy gate stack comprises a second width, the third dummy gate stack comprises a third width, and the fourth dummy gate stack comprises a fourth width,
wherein the fourth width is greater than the second width,
wherein a ratio of the second trench width to the first trench width is between 3 and 30.
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15. A method, comprising:
receiving a workpiece comprising a plurality of fin structures extending continuously along a first direction over a first area and a second area;
forming a first patterned photoresist layer over the workpiece;
etching the workpiece using the first patterned photoresist layer as an etch mask to form a first fin cut trench in the first area, the first fin cut trench extending lengthwise along a second direction perpendicular to the first direction;
forming a second patterned photoresist layer over the workpiece;
etching the workpiece using the second patterned photoresist layer as an etch mask to form a second fin cut trench in the second area, the second fin cut trench extending lengthwise along the second direction;
forming a first isolation feature in the first fin cut trench and a second isolation feature in the second fin cut trench;
forming a first dummy gate stack directly over the first isolation feature and a second dummy gate stack over a first channel region of the plurality of fin structures in the first area;
forming a third dummy gate stack directly over the second isolation feature and a fourth dummy gate stack over a second channel region of the plurality of fin structures in the second area; and
replacing the first dummy gate stack, the second dummy gate stack, the third dummy gate stack, and the fourth dummy gate stack with a first gate structure, a first isolation gate structure, a second gate structure, and a second isolation gate structure, respectively,
wherein the first fin cut trench comprises a first width along the first direction,
wherein the second fin cut trench comprises a second width along the first direction,
wherein a ratio of the second width to the first width is between 3 and 30.
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