US 12,224,208 B2
Method of separating electronic devices having a back layer and apparatus
Gordon M. Grivna, Mesa, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Feb. 5, 2021, as Appl. No. 17/248,751.
Application 17/248,751 is a division of application No. 16/535,562, filed on Aug. 8, 2019, granted, now 10,950,503.
Application 16/535,562 is a division of application No. 15/874,307, filed on Jan. 18, 2018, granted, now 10,446,446, issued on Oct. 15, 2019.
Application 15/874,307 is a division of application No. 15/403,676, filed on Jan. 11, 2017, granted, now 9,917,013, issued on Mar. 13, 2018.
Application 15/403,676 is a continuation of application No. 15/185,208, filed on Jun. 17, 2016, granted, now 9,589,844, issued on Mar. 7, 2017.
Application 15/185,208 is a continuation of application No. 14/222,464, filed on Mar. 21, 2014, granted, now 9,418,894, issued on Aug. 16, 2016.
Prior Publication US 2021/0183705 A1, Jun. 17, 2021
Int. Cl. H01L 21/78 (2006.01); B26F 3/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01)
CPC H01L 21/78 (2013.01) [B26F 3/02 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/67092 (2013.01); H01L 21/67132 (2013.01); H01L 21/6836 (2013.01); H01L 2221/68336 (2013.01); H01L 2221/68381 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus for singulating a layer of material on a semiconductor substrate comprising:
a compression chamber comprising a lower chamber wall, an upper chamber wall, and vertical sidewalls that extend upward from the lower chamber wall to the upper chamber wall; wherein:
the vertical sidewalls bound the compression chamber on all sides to maintain pressure within the compression chamber;
the upper chamber wall comprises an opening extending through the upper chamber wall; and
the lower chamber wall is configured for supporting a semiconductor substrate having a layer of material disposed on a major surface of the semiconductor substrate;
a bladder inside the compression chamber and comprising a bladder top side, a bladder lower side, and a bladder side extending between the bladder top side and the bladder lower side; and
a compression plate within the compression chamber adjacent to the bladder top side, wherein:
the compression plate is mounted for movement in response to a downward pressure from a fluid introduced through the opening; and
the compression plate is adapted to apply a controlled and substantially uniform pressure through the bladder towards the lower chamber wall.