US 12,224,204 B2
Semiconductor device and method
Po-Nan Yeh, Hsinchu (TW); Yu-Shih Wang, Tainan (TW); and Ming-Hsi Yeh, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 26, 2022, as Appl. No. 17/873,353.
Application 17/873,353 is a division of application No. 16/728,145, filed on Dec. 27, 2019, granted, now 11,488,859.
Prior Publication US 2022/0367258 A1, Nov. 17, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/76834 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first inter-layer dielectric over a semiconductor substrate;
a conductive feature extending through the first inter-layer dielectric;
a first etch stop layer over the conductive feature and the first inter-layer dielectric, the first etch stop layer being a first dielectric material;
a second inter-layer dielectric over the first etch stop layer;
a contact having a first portion extending through the second inter-layer dielectric and a second portion extending through the first etch stop layer, the contact being physically and electrically coupled to the conductive feature, the first portion of the contact and the second portion of the contact comprising a continuous conductive material; and
a first protective layer surrounding the second portion of the contact, the first portion of the contact being free from the first protective layer, the first protective layer being a second dielectric material, the second dielectric material being different from the first dielectric material.