US 12,224,185 B2
Method of manufacturing semiconductor device
Hideharu Itatani, Toyama (JP); Toshiyuki Kikuchi, Toyama (JP); and Naofumi Ohashi, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jul. 18, 2023, as Appl. No. 18/354,190.
Application 18/354,190 is a continuation of application No. 17/722,726, filed on Apr. 18, 2022, granted, now 11,728,183.
Application 17/722,726 is a continuation of application No. 17/477,174, filed on Sep. 16, 2021, granted, now 11,322,370, issued on May 3, 2022.
Claims priority of application No. 2021-113917 (JP), filed on Jul. 9, 2021.
Prior Publication US 2023/0360930 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/67017 (2013.01) [C23C 16/4412 (2013.01); C23C 16/45519 (2013.01); C23C 16/45557 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) adjusting pressure of each of process chambers, by adjusting a pressure-adjuster provided to a gas exhauster comprising process chamber exhaust pipes individually connected to the process chambers, respectively, and a common gas exhaust pipe disposed to merge respective process chamber exhaust pipes on a downstream side of the process chamber exhaust pipes, and by exhausting an atmosphere of each of the process chambers from the gas exhauster while supplying inert gas to the process chambers; and
(b) detecting a fluctuation in pressure of the process chamber exhaust pipes by measuring the pressure of the process chamber exhaust pipes for a predetermined time in parallel with supplying the inert gas to the process chambers.