US 12,224,179 B2
Metal heterojunction structure with capping metal layer
Yi-Sheng Lin, Hsinchu (TW); Chi-Jen Liu, Hsinchu (TW); Chi-Hsiang Shen, Hsinchu (TW); Te-Ming Kung, Hsinchu (TW); Chun-Wei Hsu, Hsinchu (TW); Chia-Wei Ho, Hsinchu (TW); Yang-Chun Cheng, Hsinchu (TW); William Weilun Hong, Hsinchu (TW); Liang-Guang Chen, Hsinchu (TW); and Kei-Wei Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsincha (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 15, 2023, as Appl. No. 18/184,438.
Application 17/323,951 is a division of application No. 16/400,620, filed on May 1, 2019, granted, now 11,037,799, issued on Jun. 15, 2021.
Application 18/184,438 is a continuation of application No. 17/323,951, filed on May 18, 2021, granted, now 11,637,021.
Claims priority of provisional application 62/736,957, filed on Sep. 26, 2018.
Prior Publication US 2023/0230846 A1, Jul. 20, 2023
Int. Cl. H01L 21/321 (2006.01); C09G 1/02 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01)
CPC H01L 21/3212 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/7684 (2013.01); H01L 21/76849 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/535 (2013.01); C09G 1/02 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a first dielectric layer, the first dielectric layer being a monolithic layer;
a first metal structure within the first dielectric layer, an upper surface of the first metal structure being lower than an upper surface of the first dielectric layer;
a second metal structure over the upper surface of the first metal structure;
wherein an upper portion of the first dielectric layer includes a doping property that is different from a lower portion of the first dielectric layer.