US 12,224,178 B2
Method of manufacturing vias with pulsing plasma
Zhi-Xuan Shen, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Oct. 17, 2023, as Appl. No. 18/488,057.
Application 18/488,057 is a continuation of application No. 17/452,769, filed on Oct. 28, 2021, granted, now 11,817,322.
Prior Publication US 2024/0047221 A1, Feb. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/31116 (2013.01) [H01L 21/0212 (2013.01); H01L 21/0228 (2013.01); H01L 21/31144 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor, comprising:
providing a stacked structure comprising a first oxide layer, a second oxide layer, and a metal layer stacked between the first oxide layer and the second oxide layer;
patterning the second oxide layer by performing a pulsing plasma process;
pumping out highly volatile reactants produced in the pulsing plasma process;
forming a mask layer on the patterned second oxide layer;
introducing a gas mixture to the stacked structure;
performing another pulsing plasma process to the stacked structure through the mask layer to form at least one via running through the first oxide layer, the metal layer, and the second oxide layer; and
pumping out highly volatile reactants produced in the another pulsing plasma process.