US 12,224,175 B2
Apparatus and method of forming a semiconductor layer
Olaf Fiedler, Dresden (DE); and Daniel Kai Simon, Dresden (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Oct. 25, 2021, as Appl. No. 17/509,256.
Application 17/509,256 is a division of application No. 16/272,134, filed on Feb. 11, 2019, abandoned.
Claims priority of application No. 102018103168.8 (DE), filed on Feb. 13, 2018.
Prior Publication US 2022/0051891 A1, Feb. 17, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/448 (2006.01); C23C 16/52 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/02532 (2013.01) [C23C 16/24 (2013.01); C23C 16/4481 (2013.01); C23C 16/52 (2013.01); H01L 21/0262 (2013.01); H01L 21/68714 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of forming a silicon layer, the method comprising:
introducing a source gas containing a precursor material and a carrier gas into a reactor;
controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas;
introducing an auxiliary gas into the reactor; and
controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor made up of the source gas flow and the auxiliary gas flow is held constant when the gas flow of the source gas changes.