| CPC H01L 21/02491 (2013.01) [H01L 21/02422 (2013.01); H01L 21/02502 (2013.01); H01L 21/0254 (2013.01)] | 5 Claims |
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1. A stacked structure, comprising:
an amorphous substrate;
a first metal buffer layer disposed directly on an upper surface of the amorphous substrate;
a second metal buffer layer disposed on the first metal buffer layer; and
a semiconductor structure disposed on the second metal buffer layer,
wherein the semiconductor structure comprises:
a first semiconductor layer disposed on the second metal buffer layer;
an active layer disposed on the first semiconductor layer; and
a second semiconductor layer disposed on the active layer.
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