	US 12,224,166 B2
	Magnesium oxide sputtering target
Hiroki Kajita, Ibaraki (JP); Yoshitaka Shibuya, Ibaraki (JP); and Satoyasu Narita, Ibaraki (JP)
Assigned to JX ADVANCED METALS CORPORATION, Tokyo (JP)
Appl. No. 17/284,003
Filed by JX Nippon Mining & Metals Corporation, Tokyo (JP)
PCT Filed Oct. 9, 2019, PCT No. PCT/JP2019/039801 § 371(c)(1), (2) Date Apr. 9, 2021, PCT Pub. No. WO2020/075750, PCT Pub. Date Apr. 16, 2020.
Claims priority of application No. 2018-191474 (JP), filed on Oct. 10, 2018.
Prior Publication US 2021/0351023 A1, Nov. 11, 2021
Int. Cl. H01J 37/34 (2006.01); C01F 5/02 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01)

CPC H01J 37/3426 (2013.01) [C01F 5/02 (2013.01); C23C 14/081 (2013.01); C23C 14/3407 (2013.01); C01P 2002/60 (2013.01); C01P 2004/03 (2013.01); C01P 2004/61 (2013.01); C01P 2006/80 (2013.01)]

3 Claims

1. A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed under a microscope is 20% or more and 50% or less; wherein the ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed is calculated based on the following formula: (ratio of crystal grains in which 20 or more pinholes are observed)={(number of crystal grains in which 20 or more pinholes are observed in a visual field under the microscope)/(total number of crystal grains in the visual field)}×100; wherein the pinholes have a diameter of about 1 μm and exist within the crystal grains; and wherein an average crystal grain size of the sputtering target is 35 μm or more to 400 μm or less.