US 12,224,163 B2
Ion beam source, substrate process apparatus including the same, and method of processing a substrate using the same
SeungWan Yoo, Suwon-si (KR); Jeongyeon Lee, Suwon-si (KR); Dohyung Kim, Suwon-si (KR); Jaehong Park, Suwon-si (KR); and Dong-Chan Lim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 15, 2023, as Appl. No. 18/234,123.
Claims priority of application No. 10-2022-0102714 (KR), filed on Aug. 17, 2022.
Prior Publication US 2024/0062996 A1, Feb. 22, 2024
Int. Cl. H01J 37/32 (2006.01); C23C 14/34 (2006.01); H01J 27/02 (2006.01); H01J 37/08 (2006.01); H01J 37/305 (2006.01); H01J 37/34 (2006.01)
CPC H01J 37/32697 (2013.01) [C23C 14/3442 (2013.01); H01J 27/024 (2013.01); H01J 37/08 (2013.01); H01J 37/3053 (2013.01); H01J 37/3211 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/34 (2013.01); H01J 2237/081 (2013.01); H01J 2237/332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An ion beam source, comprising:
a plasma chamber comprising a plasma generating space;
a plasma generator configured to generate plasma in the plasma generating space;
a first grid connected to the plasma chamber;
a second grid connected to the plasma chamber; and
a first grid driver connected to the first grid,
wherein the first grid driver is configured to move the first grid relative to the second grid.