US 12,224,160 B2
Topographic selective deposition
Shyam Sridhar, Austin, TX (US); Peter Lowell George Ventzek, Austin, TX (US); and Alok Ranjan, Austin, TX (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 23, 2023, as Appl. No. 18/322,362.
Prior Publication US 2024/0395507 A1, Nov. 28, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32816 (2013.01); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
flowing a gas comprising a fluorocarbon to a plasma processing chamber;
sustaining a plasma generated from the gas in the plasma processing chamber; and
depositing a carbonaceous layer over the substrate by exposing the substrate to the plasma, the substrate comprising top and bottom surfaces, the bottom surface being at a bottom of a recess of the substrate, the recess having an aspect ratio between 10:1 and 100:1, the carbonaceous layer being deposited on the bottom surface, the depositing comprising a pulsed plasma process comprising a plurality of pulse cycles, each pulse cycle of the pulsed plasma process comprising:
during a first time duration, setting a source power (SP) at a first SP level and a bias power (BP) at a first BP level, wherein the plasma during the first time duration comprises fluorocarbon ions, the fluorocarbon ions polymerizing on the bottom surface to form the carbonaceous layer, and
during a second time duration, setting the SP at a second SP level higher than the first SP level and the BP at a second BP level lower than the first BP level, wherein the plasma during the second time duration comprises fluorine radicals, the fluorine radicals trimming the carbonaceous layer.