US 12,224,158 B2
Plasma processing apparatus
Yoshinori Yoshida, Tokyo (JP); Yutaka Kouzuma, Tokyo (JP); and Kazuyuki Hirozane, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 18/026,434
Filed by HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
PCT Filed Mar. 9, 2022, PCT No. PCT/JP2022/010303
§ 371(c)(1), (2) Date Mar. 15, 2023,
PCT Pub. No. WO2023/170822, PCT Pub. Date Sep. 14, 2023.
Prior Publication US 2024/0297021 A1, Sep. 5, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/32522 (2013.01); H01J 37/32834 (2013.01); H01J 2237/3344 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
an integrated gas box configured to adjust a flow rate of gas, and
a discharge portion, wherein:
the integrated gas box includes gas blocks including
a flow path through which the gas flows,
a heater configured to heat the flow path,
a bypass path provided in the flow path, and
a flow controller configured to detect an inflow amount of the gas and output the gas from the flow path to the discharge portion.